AOT2904/aob2904 general description product summary v ds i d (at v gs =10v) 120a r ds(on) (at v gs =10v) < 4.4m w < 4.2m w * r ds(on) (at v gs =6v) < 5.5m w < 5.2m w * applications 100% uis tested 100% rg tested AOT2904 to-220 tube 1000 100v 100v n-channel alphasgt tm aob2904 to-263 tape & reel 800 orderable part number package type form minimum order quantity ? trench power alphasgt tm technology ? low r ds(on) ? low gate charge ? optimized fast-switching applications ? industrial ? bms battery protection ? synchronous rectifiers in dc/dc and ac/dc converters g d s to220 top view bottom view g g s d d s d d to-263 d 2 pak top view bottom view d d s g g s AOT2904 aob2904 symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as v ds spike i v spike t j , t stg symbol t 10s steady-state steady-state r q jc * surface mount package to263(aob2904) power dissipation b 163 t c =100c 10s p d 100 120 326 gate-source voltage pulsed drain current c 120 parameter drain-source voltage continuous drain current g maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.36 60 0.46 va absolute maximum ratings t a =25c unless otherwise noted 20 v maximum units w i d v a 77 a 425 i dsm 23 mj 296 29 120 maximum junction-to-ambient a c/w r q ja 12 50 15 thermal characteristics parameter max t a =70c 5.3 c units junction and storage temperature range -55 to 175 typ p dsm w t a =25c 8.3 power dissipation a t a =70c t c =25c t c =100c t c =25c avalanche current c continuous drain current t a =25c aob2904 to-263 tape & reel 800 rev.1.0: november 2016 www.aosmd.com page 1 of 6
AOT2904/aob2904 symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.3 2.75 3.3 v to-220 3.6 4.4 t j =125c 6.3 7.7 to-220 4.1 5.5 m? to-263 3.4 4.2 m? to-263 3.9 5.2 m? g fs 90 s v sd 0.68 1 v i s 120 a c iss 7085 pf c oss 605 pf c rss 32 pf r g 0.7 1.5 2.3 ? q g (10v) 93 135 nc q gs 23 nc q gd 16 nc t d(on) 21 ns t r 22 ns t d(off) 58 ns turn-off delaytime v gs =10v, v ds =50v, r l =2.5 w , r gen =3 w turn-on rise time turn-on delaytime v ds =0v, v gs =20v maximum body-diode continuous current g input capacitance gate-body leakage current diode forward voltage dynamic parameters r ds(on) m? reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz v ds =v gs, i d =250 m a output capacitance forward transconductance i s =1a, v gs =0v v ds =5v, i d =20a static drain-source on-resistance v gs =10v, i d =20a v gs =6v, i d =20a v gs =10v, i d =20a v gs =6v, i d =20a v gs =10v, v ds =50v, i d =20a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage id=250a, vgs=0v gate source charge gate drain charge switching parameters t d(off) 58 ns t f 20 ns t rr 49 ns q rr 460 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time r gen =3 w i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =175 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. i. the spike duty cycle 5% max, limited by junctio n temperature t j(max) =125 c. rev.1.0: november 2016 www.aosmd.com page 2 of 6
AOT2904/aob2904 typical electrical and thermal characteristics 0 20 40 60 80 100 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 0 5 10 15 20 25 30 r ds(on) (m w ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =6v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =6v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =3.5v 4v 4.5v 10v 5v 6v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 2 4 6 8 10 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev.1.0: november 2016 www.aosmd.com page 3 of 6
AOT2904/aob2904 typical electrical and thermal characteristics 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - 0 2 4 6 8 10 0 20 40 60 80 100 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 7000 8000 0 20 40 60 80 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =50v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) v > or equal to 6v 10 m s 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 10ms figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 6v figure 9: maximum forward biased safe operating area (note f) r q jc =0.46 c/w rev.1.0: november 2016 www.aosmd.com page 4 of 6
AOT2904/aob2904 typical electrical and thermal characteristics 0 50 100 150 200 250 300 350 400 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) t a =25 c 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) r q ja =60 c/w rev.1.0: november 2016 www.aosmd.com page 5 of 6
AOT2904/aob2904 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar figure a: gate charge test circuit & waveforms figure b: resistive switching test circuit & wavefor ms figure c: unclamped inductive switching (uis) test c ircuit & waveforms vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr figure d: diode recovery test circuit & waveforms rev.1.0: november 2016 www.aosmd.com page 6 of 6
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